Abstract




 
   

IJE TRANSACTIONS B: Applications Vol. 31, No. 5 (May 2018) 586-595    Article in Press

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  PROCESS OPTIMIZATION OF DEPOSITION CONDITIONS FOR LOW TEMPERATURE THIN FILM INSULATORS USED IN TFT DISPLAYS
 
S. Rastani
 
( Received: July 12, 2017 – Accepted: January 14, 2018 )
 
 

Abstract    Deposition process of thin insulator for polysilicon gate dielectric of TFTs is optimized. Silane and N2O plasma is used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are studied and their effects are discussed. The physical aspects of the yielded dielectrics such as layer thickness and uniformity are presented as well.

 

Keywords    Process Optimization, Thin Film, TFT, Dielectric material, Active Matrix, Liquid Crystal

 




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