Design and Performance Analysis of Gate Overlap Dual Material Tunnel Field Effect Transistor

Document Type : Original Article

Authors

Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, A.P, India

Abstract

This study introduces a biosensor employing a dielectric-modulated dual material gate tunnel field effect transistor (DM-DMG TFET) in 10 nanometer technology. To detect diverse bio molecules, the biosensor incorporates a nano gap cavity formed through gate overlap on the drain side. The variation in ambipolar current serves as the sensing parameter, influenced by altering the dielectric constants of immobilized bio molecules within the nano cavity. In this paper, the simulation results of biosensor employing a dielectric-modulated dual material gate tunnel field effect transistor with different dielectric constants imposed in nano cavity. A comprehensive examination of the biosensor's performance is conducted, exploring various positions and filling factors of bio molecules within the nano cavity region. This analysis involves a thorough investigation into the device's performance, considering a range of parameters such as drain current, electric field distribution, variations in surface potential, configurations of energy bands, behaviors of carrier concentration, and the Ion/Ioff ratio. The simulations are done using the Silvaco TCAD Atlas tool.

Graphical Abstract

Design and Performance Analysis of Gate Overlap Dual Material Tunnel Field Effect Transistor

Keywords

Main Subjects

References

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International Journal of Engineering
Volume 37, Issue 9
TRANSACTIONS C: Aspects
September 2024
Pages 1773-1779

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